Magnetoresistance Effect in Co2MnSi/semimetallic-Fe2VAl/CoFe Junctions

Magnetoresistance in boron carbide junctions

Spin-polarized tunnelling, magnetoresistance and interfacial effects in ferromagnetic junctions

The pioneering studies of spin-polarized tunnelling by Meservey and Tedrow in the early 1970s showed that the conduction electrons in ferromagnetic (FM) metals are spin polarized and that the spin is conserved in the tunnelling process. Only recently (1995) improved material fabrication techniques have permitted realization of the JullieÁ re quantitative model, showing that tunnelling in ferrom...

Effect of Tip Resonances on Tunnelling Anisotropic Magnetoresistance in Ferromagnetic Break Junctions: A First-Principles Study

Effect of spin-dependent screening on tunneling electroresistance and tunneling magnetoresistance in multiferroic tunnel junctions

Anisotropic magnetoresistance and anisotropic tunneling magnetoresistance due to quantum interference in ferromagnetic metal break junctions.

We measure the low-temperature resistance of permalloy break junctions as a function of contact size and the magnetic field angle in applied fields large enough to saturate the magnetization. For both nanometer-scale metallic contacts and tunneling devices we observe large changes in resistance with the angle, as large as 25% in the tunneling regime. The pattern of magnetoresistance is sensitiv...